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4 edition of Ka-band GaAs FET monolithic power amplifier development found in the catalog.

Ka-band GaAs FET monolithic power amplifier development

Ka-band GaAs FET monolithic power amplifier development

[contract no. NAS3-24239]

  • 39 Want to read
  • 4 Currently reading

Published by National Aeronautics and Space Administration, National Technical Information Service, distributor in [Washington, DC, Springfield, Va .
Written in English

    Subjects:
  • Power amplifiers,
  • Field effect transistors,
  • Molecular beam epitaxy,
  • High electron mobility transistors,
  • Aluminum gallium arsenides,
  • Microwave circuits,
  • Integrated circuits,
  • Indium gallium arsenides

  • Edition Notes

    Other titlesFinal technical progress for Ka-band GaAs FET monolithic power amplifier development.
    StatementPaul Saunier and Hua Quen Tserng.
    SeriesNASA contractor report -- 202348., NASA contractor report -- NASA CR-202348.
    ContributionsTserng, Hua Quen., United States. National Aeronautics and Space Administration.
    The Physical Object
    FormatMicroform
    Pagination1 v.
    ID Numbers
    Open LibraryOL17573420M
    OCLC/WorldCa40128343

    1. Introduction. In recent years, with the development of semiconductor processing, the GaAs monolithic microwave integrated circuit (MMIC) device have provided high electron mobility, and high output power capability owing to its wide bandgap,.Therefore, GaAs MMIC is regarded as the premier power device for microwave communication system,,,, and phase array radar Cited by: 2. power amplifier (HPA) Monolithic Microwave Integrated Circuits (MMICs). The advantages of this technology are the high breakdown voltage, high power density and very good thermal conductivity of the semi-insulating (s.i.) SiC substrate. Examples of GaN MMICs up to Ka-Band have been presented [], showing power densities up toCited by:

    Ka-Band GaAs FET Monolithic Power Amplifier Development English (Publication Language) 59 Pages - 08/10/ (Publication Date) Check price on amazon. No. 4. The 20 GHz GaAs monolithic power amplifier module development. Amazon Kindle Edition; NASA, National Aeronautics and Space Administration (Author) Modeling and Design Technologies. The Ka-band load impedance values are very close to the load used in the design of 2- and 4-W Ka-band MMIC power amplifiers. 9. Ka-band amplifier designs were based on S-parameters obtained from to GHz at the operating bias point and load impedance.

    Ka‐band monolithic GaAs mesfet amplifier design Ka‐band monolithic GaAs mesfet amplifier design Rollman, J. A.; Wahid, P. F. P. F. Wahid University of Central Florida Orlando, Florida TABLE 1 Design Specificatlons Single Stage Double Stage Two Stage Gain Frequency Bandwidth Input Return Loss Output Return Loss Isolation dB min 35 . Transient gate resistance thermometry demonstrated on GaAs and GaN FET. Characterisation of GaAs pHEMT Transient Thermal Response. An Ultra Compact Watt-Level Ka-Band Stacked-FET Power Amplifier. Development and verification of a scalable GaAs pHEMT FEM thermal model.


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Ka-band GaAs FET monolithic power amplifier development Download PDF EPUB FB2

Ka-BAND GaAs FET MONOLITHIC POWER AMPLIFIER DEVELOPMENT CONTRACT NO. NAS ABSTRACT Over the course of this program, very extensive progress was made in Ka-band GaAs tech-nology. At the beginning of the program, odd-shaped VPE MESFET wafers were used. A break-through in power and efficiency was achieved with highly doped (8 x File Size: 3MB.

Abstract: The design, fabrication, and performance of several GaAs FET monolithic circuits are described. These include a two-stage, four-FET push-pull amplifier that has exhibited W output power with dB gain at GHz, and a three-transistor monolithic paraphase amplifier (unbalanced input, balanced output) exhibiting 6-dB small-signal gain and a 1-dB Cited by: Ka-Band GaAs FET Monolithic Power Amplifier Development.

By Hua Quen Tserng and Paul Saunier. We obtained power of mW with 16 dB gain and % efficiency at 34 GHz with a monolithic micron amplifier. The next breakthrough came with the use of heterostructures grown by MBE (AlGaAs/InGaAs where the InGaAs is highly doped). Author: Hua Quen Tserng and Paul Saunier.

Development of Key Monolithic Circuits to Ka-Band Full MMIC Receivers a GHz medium-power amplifier, a GHz dual-output voltage-controlled oscillator.

High-power GaAs FET Amplifiers John L B Walker This book is intended for systems engineers, hybrid and monolithic power amplifier designers, engineers involved in the development of CAD programs, academics, and industrial and goverment researchers.

The book is devoted exclusively to high power. built the first MMIC at X -Band: "Monolithic Broadband GaAs F.E.T. Amplifiers" • In H. Hung et al at COMSAT built the 1 st mm-wave MMIC at 20GHz "Ka-Band monolithic GaAs power FET amplifiers" • MMIC stands for Monolithic Microwave Integrated CircuitsFile Size: 6MB.

Sumitomo Electric provides GaAs power amplifier MMICs mounted in a suitable high frequency package with output power 50mW - 2W at frequencies ranging from C-band to Ka-band.

Sumitomo Electric provides various types of packages including highly reliable hermetically sealed types, low cost surface mount types and very low cost QFN types.

Abstract: An ultra-compact watt-level Ka-band monolithic microwave integrated circuit (MMIC) power amplifier (PA) is demonstrated using a μm Gallium Arsenide (GaAs) stacked field effect transistor (stacked-FETs) configuration.

The fabricated PA exhibits dBm output power, 17 dB gain and 33% power added efficiency (PAE). The bandwidth is from 26 Cited by: This paper describes the design of a GaAs monolithic high power amplifier at Ku band.

The chip delivers about 40 dBm of saturated output power, in. Power GaAs C to Ka Band Power Amplifier MMICs (Packages) SUMITOMO ELECTRIC 14 Specifications Part Number Freq. (GHz) P1dB Gain Compression Point *Under Development Note: Tc=+25°C or Ta=+25°C Naming Rules SM M XZ Package Code Monolithic IC Microwave Product Photo Power GaAs Ku to V Band Multiplier MMICs.

Abstract. One of the most important applications of GaAs FETs is in small signal amplifier components. High-frequency low-noise GaAs FETs are used in phase-array radars, signal processors, space based electronic detection systems, tracking Author: Michael Shur.

two-stage power amplifier design is included as an example. Finally, MMIC (monolithic microwave integrated circuit) realization of lumped element designs is discussed. With the exception of distributed amplifiers, microwave amplifiers are usually comprised of several GaAs FET devices interconnected with input,File Size: 9MB.

Design, Realisation and Test of GaAs-based Monolithic Integrated X-band High-Power Amplifiers PROEFONTWERP ter verkrijging van de graad van doctor aan de Technische Universiteit Eindhoven, op gezag van de Rector Magnificus, R.A. van Santen, voor een commissie aangewezen door het College voor Promoties in het openbaar te verdedigen opCited by: This book is intended for systems engineers, hybrid and monolithic power amplifier designers, engineers involved in the development of CAD programs, academics, and industrial and goverment researchers.

The book is devoted exclusively to high power GaAs FET amplifier design, covering the subject comprehensively, including FET design, circuit design, thermal. (2) 2 Watt Power FET Bandwidth: to GHz Output power: 2 Watt min Associated gain: 4 dB min Efficiency: 18 percent min As a result of the previous development of the 20 GHz W GaAs FET POC Amplifier under this contract (Cf.

Report No. CR ), it became obvious that the GaAs FET devices had to be improved to provide high-powerFile Size: 6MB. Get this from a library. Ka-band GaAs FET monolithic power amplifier development: [contract no.

NAS]. [Paul Saunier; Hua Quen Tserng; United States. National Aeronautics and Space Administration.]. High-Power GaAs FET Amplifiers (Artech House Microwave Library (Hardcover)) by John L.

Walker (Author, Preface, Introduction) out of 5 stars 1 rating. ISBN ISBN Why is ISBN important. ISBN. This bar-code number lets you verify that you're getting exactly the right version or edition of a book.

The 13 Cited by: Gallium Arsenide IC Applications Handbook is the first text to offer a comprehensive treatment of Gallium Arsenide (GaAs) integrated chip (IC) applications, specifically in microwave systems. The books coverage of GaAs in microwave monolithic ICs demonstrates why GaAs is being hailed as a material of the future for the various advantages it.

The book is devoted exclusively to high power GaAs FET amplifier design, covering the subject comprehensively, including FET design, circuit design, thermal and reliability analy (展开全部) This book is intended for systems engineers, hybrid and monolithic power amplifier designers, engineers involved in the development of CAD programs.

United Monolithic Semiconductors All information contained in this document remains the sole and exclusive property of UNITED MONOLITHIC SEMICONDUCTORS and shall not be disclosed by the recipient to third party without the prior consent of UNITED MONOLITHIC SEMICONDUCTORS.

Apr page 1 Power Amplifiers for Ku- and Ka-band VSAT File Size: 2MB. This book covers the use of devices in microwave circuits and includes such topics as semiconductor theory and transistor performance, CAD considerations, intermodulation, noise figure, signal handling, S-parameter mapping, narrow- and broadband techniques, packaging and thermal considerations.

Perhaps the most comprehensive text on GaAs FET technology and Cited by: Millimeter-Wave Integrated Circuits delivers a detailed overview of MMIC design, specifically focusing on designs for the millimeter-wave (mm-wave) frequency range. The scope of the book is broad, spanning detailed discussions of high-frequency materials and technologies, high-frequency devices, and the design of high-frequency circuits.

The design material is 5/5(2).A 4 W K-band AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor (PHEMT) monolithic microwave integrated circuit (MMIC) high power amplifier (PA) is reported.

This amplifier is designed to fully match for a 50 Ω input and output impedance based on the μm power PHEMT by: 2.